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Semiconductor Strain Gages
Overview
The KSPB series gages are stable-performance semiconductor strain gages usable for general stress measurement and transducers.
The F2 type has a half-bridge formed with a 2-element structure (Positive and Negative), for self-temperature compensation and is suitable for strain measurement of steel products.
Technical Information
Major Properties
Materials Resistive element 1-element: P type Si
2-element: P type Si and N type Si (2-element structure)
Materials Base Polyimide
Operating temperature in combination with major adhesives after curing (°C) CC-33A: -50 to 120ºC
EP-340: -50 to 150ºC
Operating temperature in combination with major leadwire cables (°C) -
Self-temperature-compensation (°C) 1-element: -
2-element: 20 to 50
Applicable linear expansion coefficients (×10^-6/℃) 1-element: -
2-element: 11
Strain limits at normal temp. (approx. %) 1-element: 0.3
2-element: 0.15
Fatigue lives at normal temp. (times) 2x10^6 (±1000 μm/m)
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